Stand-by Power Reduction Using Experimentally Demonstrated Nano-Electromechanical Switch in CMOS Technologies

摘要

In this article, we demonstrate a double-clamped nano-electromechanical switch (NEMS) with low stand-by power as an effective solution to the leakage issues in scaled CMOS-based power gating (PG) in logic circuits. The proposed NEMS structure is achieved to have a low pull-in (~1.2 V), low hysteresis (<0.3 V), low turn-on delay (35 ns), and subthreshold slope of <6 mV/decade. This enables reduction in stand-by power dissipation in sub 10-nm CMOS technologies with a narrow 100 nm dimple gap for the low-power NEMS. We illustrate that the PG in ISCAS’85 benchmark circuits using the proposed fabricated NEMS shows significant leakage energy reduction for ${T}_{ext{ON}}/{T}_{ext{OFF}} < {0.01}$ as compared to the sub 10-nm CMOS based PG.