Temporal Electron-Spin Splitter Based on a Semiconductor Microstructure Constructed on Surface of InAs/AlxIn1-x As Heterostructure by Patterning a Ferromagnetic Stripe and a Schottky-Metal Stripe

摘要

We theoretically explore dwell time for electrons in a semiconductor microstructure, which is constructed on the surface of the InAs/Al _x In _1-x As heterostructure by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in a parallel configuration. Dwell time is found to be dependent on electron spins. Spin-polarized dwell time can be controlled by changing an applied voltage to SM stripe. Thus, electron spins can be separated in time dimension, and such a semiconductor microstructure can be used as an electrically tunable temporal spin splitter for spintronics device applications.