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机译:频率改进的4H-SIC IGBT,具有多筒式收集器设计
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Wide Band Gap Semicond Mat & Device Xian 710071 Peoples R China;
Insulated gate bipolar transistors; Performance evaluation; Switches; Silicon carbide; Junctions; Logic gates; Energy loss; 4H-SiC insulated-gate bipolar transistor (IGBT); carrier extraction; high frequency; switching loss;
机译:具有背面n-p-n集电极的4H-SiC沟道IGBT,可实现低关断损耗
机译:高压4H-SiC双向IGBT的工作原理,设计考虑因素和实验特性
机译:基于TCAD的4H-SiC基IGBT的设计诊断研究
机译:10kV 4H-SiC IGBT四区域多步场限制环的设计与优化
机译:开发基于物理的4H-SiC高压功率开关模型-MOSFET,IGBT和GTO。
机译:基于新型Volterra k最近邻最优修剪极限学习机(VKOPP)模型的绝缘栅双极晶体管(IGBT)剩余寿命估算
机译:关于超高压4H-SiC IGBT的鲁棒性,具有优化的逆行P阱