BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect

摘要

A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35-and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement.