Flexible Transparent InGaZnO Thin-Film Transistors on Muscovite Mica

摘要

In this paper, we report the fabrication of flexible and transparent InGaZnO thin-film transistors on muscovite mica substrates. The mica substrate is compatible with four-step photolithographic processes as well as high-temperature processes. The field-effect mobility, subthreshold swing, ON/OFF ratio, threshold voltage, and hysteresis voltage are improved after annealing both at 300 degrees C and 400 degrees C in nitrogen. The device demonstrates more stable performance under positive gate bias stress when annealed at 400 degrees C than at 300 degrees C. The electrical performances are stable when exposed to tensile bending cycles up to 10 000 times. The mica with devices shows small optical loss in the visible region, where the average transmittance is as high as 86.75%.