The Investigation of Post-Annealing-Induced Defects Behavior on 90-nm In Halo nMOSFETs With Low-Frequency Noise and Charge-Pumping Measuring

摘要

In this letter, we investigated the effects of post-annealing on indium (In) halo-induced defects for 90-nm nMOSFETs with both low-frequency noise and charge-pumping (CP) current measuring methods. The noise in In halo devices with and without a post-annealing is lower and higher than that in Boron-halo devices, respectively. Additionally, with increase of annealing time, the noise is decreased for the measuring frequency less than 1 kHz due to the efficient elimination of oxide defects. For frequency larger than 1 kHz, the longer annealing time induces a larger quantity interface defects thus enhancing the generation of noise in high frequency. The results are nicely supported by the measurements of gate integrity and CP currents