Effect of Top Electrode Material on Resistive Switching Properties of $hbox{ZrO}_{2}$ Film Memory Devices

摘要

The influence of top electrode material on the resistive switching properties of $hbox{ZrO}_{2}$-based memory film using Pt as a bottom electrode was investigated in this letter. In comparison with $hbox{Pt/ZrO}_{2}/hbox{Pt}$ and $hbox{Al/ZrO}_{2}/hbox{Pt}$ devices, the $hbox{Ti/ZrO}_{2}/hbox{Pt}$ device exhibits different resistive switching current–voltage $(I$– $V)$ curve, which can be traced and reproduced by a dc voltage more than 1000 times only showing a little decrease of resistance ratio between high and low resistance states. Furthermore, the broad dispersions of resistive switching characteristics in the $hbox{Pt/ZrO}_{2}/hbox{Pt}$ and $hbox{Al/ZrO}_{2}/hbox{Pt}$ devices are generally observed during successive resistive switching, but those dispersions are suppressed by the device using Ti as a top electrode. The reliability results, such as cycling endurance and continuous readout test, are also presented. The write-read-erase-read operations can be over $hbox{10}^{4}$ cycles without degradation. No data loss is found upon successive readout after performing various endurance cycles.