Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

Lee D.; Baek S.; Ree M.; Kim O.

首页> 外文期刊>IEEE Electron Device Letters >Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

【24h】

Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

机译：电极材料对基于聚（邻氨基苯甲酸）薄膜的非易失性存储器件电开关特性的影响

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

团队文献服务 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We investigated the effect of the electrode material on the electrical-switching characteristics (i.e., electrical-switching behavior, switching voltage, and on/off current ratio) of a nonvolatile resistive-memory device based on an active poly(

机译：我们研究了电极材料对基于有源多晶硅（<式f的非易失性电阻式存储器件）的电开关特性（即电开关行为，开关电压和开/关电流比）的影响

著录项

来源
《IEEE Electron Device Letters 》 |2008年第7期| p.694-697| 共4页
作者
Lee D.; Baek S.; Ree M.; Kim O.;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类一般性问题 ;
关键词

相似文献

外文文献
中文文献
专利

1. Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Film [J] . Ha H., Kim O. Electron Device Letters, IEEE . 2010 ,第4期

机译：基于聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）薄膜的有机非易失性存储器件的电极材料相关开关特性
2. Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films [J] . Heonjun Ha, Ohyun Kim Japanese journal of applied physics . 2009 ,第4issue2期

机译：基于聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）薄膜的非易失性存储器件的单极开关特性
3. Bipolar Switching Characteristics Of Nonvolatile Memory Devices Based On Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) Thin Film [J] . Heonjun Ha, Ohyun Kim Applied Physicsletters . 2008 ,第3期

机译：基于聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）薄膜的非易失性存储器件的双极开关特性
4. The Ferroelectric Characteristics of Ba(Zr_(0.1)Ti_(0.9))O_3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices [C] . Kai-Huang Chen, Jen-Hwan Tsai, Chia-Lin Wu International Conference on Chemical Engineering and Advanced Materials . 2011

机译：BA（Zr_（0.1）Ti_（0.9））O_3薄膜的铁电特性在退火后处理，用于非易失性存储器件中的应用
5. Processing and characterization of ferroelectric and electrode materials for nonvolatile and dynamic random-access memories [D] . Vellaikal, Manoj 1996

机译：用于非易失性和动态随机存取存储器的铁电和电极材料的处理和表征
6. Nonvolatile Memory Device Based on Copper PolyphthalocyanineThin Films [O] . Xianfei Guo, §, Jie Liu, 2019

机译：基于铜酞菁的非易失性存储器件薄膜
7. Bipolar switching characteristics of nonvolatile memory devices based on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) thin film [O] . Heonjun Ha, Ohyun Kim 2008

机译：基于聚（3,4-乙二氧基噻吩）的非易失性存储器件的双极切换特性：聚（苯乙烯磺酸盐）薄膜

Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly($o$-anthranilic acid) Thin Films

摘要

著录项

相似文献

相关主题

期刊订阅