Surviving Process Variation: Investigation of CNR MOSFETs With Tapered Channels Using Fully Self-Consistent NEGF and Tight-Binding Methods

摘要

A fully self-consistent 3-D device simulator which combines nonequilibrium Green''s function and atomistic tight-binding Hamiltonian for carrier transport is developed to characterize the performance of double-gate carbon nanoribbon (CNR) MOSFETs. Our sim