Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation

摘要

We report the first integration of a novel solid Antimony (Sb) segregation (SSbS) process in a transistor fabrication flow. A thin solid Sb layer, which acts as a large source of n-type dopants, was deposited beneath a metallic nickel layer prior to sourc