Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

摘要

The prototypical device to exploit cold carrier injection is the nanowire (NW) or carbon nanotube (CNT) band-to-band tunneling field-effect transistor. Understanding the effect of material choice and NW or CNT diameter on the drive and leakage currents is critical. A zero-order analytical approach is described for assessing and comparing the effect of different materials and diameters on the drive current, the leakage current, and the required electric fields.