A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

摘要

A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field $(E_{rm Cd})$ and its permittivity $(varepsilon_{rm rd})$ is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70-$muhbox{m}$-width and 100- $muhbox{m}$-depth trench filled by BCB.