Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage

摘要

Write-once–read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over $hbox{10}^{4}$ and can be well sustained for more than 100 years and perfectly endure reading cycles of $hbox{10}^{8}$ . The conducting filaments consisting of oxygen vacancies are responsible for the switching mechanism.