Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good Retention

摘要

We have fabricated the TaN–$[hbox{SiO}_{2}{-}hbox{LaAlO}_{3}]$ –HfON–$[hbox{LaAlO}_{3}{-}hbox{SiO}_{2}]$ –Si charge-trapping Flash device. A large 6.4-V initial memory window, a 4.3-V 10-year extrapolated retention window at 125 $^{circ}hbox{C}$, and a 5.5-V endurance window at $hbox{10}^{6}$ cycles were measured under very fast 100- $muhbox{s}$ and low $pm$ 16-V program/erase. These excellent results were achieved using an $hbox{As}^{+}$ implant into the HfON trapping layer, which were significantly better than those of the control device without ion implantation.