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首页> 外文期刊>Electron Device Letters, IEEE >Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications
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Aluminum Nitride Lamb-Wave Resonators for High-Power High-Frequency Applications

机译:氮化铝兰姆波谐振器,用于大功率高频应用

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摘要

We report a Lamb acoustic wave resonator with high-power-handling, linearity, and intermodulation distortion capabilities. Fundamental physical aspects are examined as well, the study providing the full picture for a high-power radio-frequency application design. Despite their reduced size and freestanding structure, our checkered-electrode aluminum nitride resonators perform $+$20 dBm 1-dB compression point (P1dB), third-order intermodulation distortion intercept point (IIP3) close to $+$40 dBm, and second-order intermodulation distortion intercept point (IIP2) around $+$70 dBm with quality factor $Q = hbox{1225}$ and effective electromechanical coupling coefficient $k_{rm eff}^{2}$ of 1.4% at 232 MHz, thus challenging current-art contour-mode and bulk acoustic wave resonators.
机译:我们报告了具有高功率处理,线性和互调失真能力的兰姆声波谐振器。还检查了基本的物理方面,该研究为高功率射频应用设计提供了全貌。尽管其尺寸减小且具有独立式结构,但我们的方格电极氮化铝谐振器仍能执行$ + $ 20 dBm 1-dB压缩点(P1dB),接近$ + $ 40 dBm的三阶互调失真拦截点(IIP3)和二阶互调失真拦截点(IIP2)约为$ + $ 70 dBm,质量因子$ Q = hbox {1225} $,有效机电耦合系数$ k_ {rm eff} ^ {2} $在232 MHz下为1.4%,因此对电流-轮廓波和体声波谐振器。

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