High-Mobility Solution-Processed Amorphous Indium Zinc $hbox{Oxide/In}_{2}hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

摘要

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals ($hbox{In}_{2}hbox{O}_{3}$ NCs) into IZO films based on a sol–gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 $hbox{cm}^{2}cdot hbox{V}^{-1}cdot hbox{s}^{-1}$ and an on–off ratio of $hbox{10}^{7}$ , which were obtained at 1 mol% $hbox{In}_{2}hbox{O}_{3}$ NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol–gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.