0.34 src='/images/tex/32595.gif' alt='text{V}_{mathrm {T}}'> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

摘要

A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn- voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of /mm at −15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.