Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

摘要

This letter presents a theoretical analysis of the dielectric modulated drift region in Si power devices. By inserting multiple dielectric columns in the drift region the tradeoff between the breakdown voltage (BV) and the specific ON-resistance () can be significantly improved. An analytical model for the electric field distribution and breakdown voltage of this structure is derived and a methodology is proposed for identifying the optimal BV- tradeoff. The 2-D numerical simulations are conducted to verify the accuracy of the proposed model.