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机译:梯度AlGaN异质结FET上的无凹陷非合金欧姆接触
Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA;
III-V semiconductors; aluminium; contact resistance; field effect transistors; gallium compounds; ohmic contacts; two-dimensional electron gas; wide band gap semiconductors; 2D electron gas; alluminium composition; direct contact; graded heterojunction FET; heterojunction band offset elimination; interfacial resistance; polarization-graded field-effect transistor structure; recess-free nonalloyed ohmic contacts; record low-resistance; reverse grading; total contact resistance; ultralow-resistance contacts; upward grading; Aluminum gallium nitride; Contact resistance; Gallium nitride; HEMTs; MODFETs; Ohmic contacts; Resistance; FETs; GaN; HEMTs; HFETs; PolFETs; graded; nonalloyed; ohmic contacts; polarization grading; regrowth;
机译:基于GaN / AlGaN异质结的高电子迁移率晶体管中非合金欧姆接触到2D电子气的选择性MBE生长
机译:使用渐变n / sup + /(InGa)As盖层的具有非合金欧姆接触的MESFET
机译:在Ti / Al接触中形成n型AlGaN的非合金欧姆接触
机译:AlGaN / GaN Hemts具有大角度植入非合金欧姆触点
机译:具有砷化铟镓发射极层的异质结双极晶体管的钯-锗欧姆接触制造和表征。
机译:掺Si的双面非合金欧姆接触等离子体电子器件的砷化镓
机译:用于制造GaAs MESFET的新型非合金热稳定Pd / Sn和Pd / Sn / Au欧姆接触
机译:使用渐变InGaas帽层的Gaas具有良好形态的非合金和合金低电阻欧姆接触