Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in In_xGa_1-xAs FinFET

摘要

In this letter, we present a comparative study of positive bias temperature instability (PBTI) reliability in InGaAs FinFET with varying Indium (, 0.70) percentage and quantization [bulk, quantum well (QW)]. Due to lower effective transport mass and higher injection velocity, InGaAs QW FinFET provides better performance than InGaAs bulk FinFET. However, stronger quantization lowers the effective barrier height between the carriers and defect density in the oxide causing degraded PBTI reliability in the former. Our preliminary PBTI stress study shows that InGaAs QW FinFETs may need to operate at a gate overdrive of 0.1 V (i.e., near threshold operation) to meet 10 years of reliability specifications at 85 °C.