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机译:电离增强型AlGaN异质结构雪崩光电二极管
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China;
School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou, China;
Aluminum gallium nitride; Wide band gap semiconductors; Avalanche photodiodes; Impact ionization; Dark current; Electric breakdown;
机译:用高低掺杂和异质电荷层的单独吸收和乘法AlGaN太阳盲雪崩光电二极管
机译:AlGaN雪崩光电二极管异质结构倍增区中电场分布的精细控制
机译:基于AlGaN的SAGCM雪崩光电二极管中的双异质结构乘法区域
机译:GaN / Algan Avalanche光电二极管探测器技术高性能紫外线传感应用
机译:新型半导体异质结构系统的研究:I.氧化铈/硅异质结构II。 6.1基于半导体的雪崩光电二极管。
机译:使用低Al组成的单个AlGaN层在Si衬底上生长高质量和均匀的AlGaN / GaN异质结构
机译:研究新型半导体异质结构系统:I:氧化铈/硅异质结构。 II:6.1°基于半导体的雪崩光电二极管