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机译:常关 - β-GA2O3功率MOSFET,具有铁电荷存储栅极堆叠结构
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
Xidian Univ Sch Microelect State Key Discipline Lab Wide Band Gap Semicond T Xian 710071 Peoples R China;
beta-Ga2O3 MOSFET; enhancement mode; ferroelectric; charge storage; stress test;
机译:具有用于高功率应用的叠层铁电电荷存储栅极普通近β-GA_2O_3 MOSFET的设计和制造
机译:用于长通道未掺杂栅极堆栈周围栅极MOSFET的分析漏极电流模型,包括界面固定电荷
机译:局部栅叠层寄生电荷对具有高介电常数和Ge通道的双栅MOSFET电流-电压特性的影响
机译:使用混合铁电电荷陷阱栅堆叠的高Vth增强模式GaN功率器件,具有最高ID,最大值
机译:具有高kappa栅极堆叠的III-V p-MOSFET的开发,用于未来的CMOS应用。
机译:具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
机译:在In0.7ga0.3as的不稳定性,用单层AL2O3和双层AL2O3 / HFO2栅极堆叠在正偏置温度(PBT)应力下引起的单层AL2O3和双层AL2O3 / HFO2堆叠
机译:用于电力电子应用的B Ga2O3 mOsFET的最新进展。