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机译:使用双栅极低温多Si TFT抑制扭结效应和热载波应力降解
Natl Cheng Kung Univ Dept Photon Tainan 70101 Taiwan;
Natl Sun Yat Sen Univ Dept Photon Kaohsiung 80424 Taiwan;
Natl Tsing Hua Univ Dept Elect Engn Hsinchu 30013 Taiwan;
Natl Sun Yat Sen Univ Dept Chem Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Mat & Optoelect Sci Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Mat & Optoelect Sci Kaohsiung 80424 Taiwan;
Natl Sun Yat Sen Univ Dept Mat & Optoelect Sci Kaohsiung 80424 Taiwan;
Natl Cheng Kung Univ Dept Photon Tainan 70101 Taiwan;
Natl Sun Yat Sen Univ Dept Phys Kaohsiung 80424 Taiwan;
Kink effect; hot-carrier stress (HCS); floating body effect; impact ionization;
机译:动态热载体应力下可靠低温多Si TFT的载体注射端子优化设计
机译:热载流子应力下具有NH_3等离子体钝化的Trigate纳米线多晶硅TFT的降解行为
机译:具有不对称双栅极的多晶硅TFT,可降低扭结电流
机译:由于高场,热载流子和辐射应力,n沟道多晶硅TFT的器件性能下降
机译:铟镓锌氧化物TFT的热应力降解研究
机译:采用无注入技术的全栅TiN / Al2O3堆叠结构的低温多晶硅纳米线无结器件
机译:由于高场,热载流子和辐射应力,n沟道多晶硅TFT的器件性能下降
机译:双极晶体管中热载流子应力与电离诱导退化的相关性