Realization of Artificial Neuron Using MXene Bi-Directional Threshold Switching Memristors

摘要

Artificial neurons and synapses are critical units for processing intricate information in brain-inspired neuromorphic systems. Memristors are frequently engineered as artificial synapses due to their simple structures, nonlinear dynamics, and high-density integration. However, the development of artificial neurons on memristors has less progress. In this letter, we propose a rich dynamics-driven artificial neuron based on two-dimensional materials MXene. Partial essential neural features of neural processing, including leaky integration, automatic threshold-driven fire, and self-recovery, were successfully emulated in a unified manner. The space-charge-limited current (SCLC) model accompanied by electrochemical metallization effect was used to explain electrical characteristics. This work will provide a useful guideline for designing and manipulating memristor as artificial neurons for brain-inspired systems.