Coupled BAW/SAW Resonators Using AlN/Mo/Si and AlN/Mo/GaN Layered Structures

摘要

We demonstrate coupled bulk and surface acoustic wave (BAW/SAW) resonators with significantly improved coupling efficiency as compared to SAW only devices. Two sets of stacks are investigated: one uses a thin film piezoelectric material with a bottom electrode on GaN substrate (i.e., AlN/Mo/GaN) and another includes a piezoelectric thin film with bottom metal on a Si substrate (i.e., AlN/Mo/Si). A vibrating BAW transducer induces a SAW in the substrate and between two sets of interdigitated transducers improving the coupling efficiency by a factor of >= 8x as compared to the conventional SAW. The performance of the coupled BAW/SAW resonators using each of the Si and GaN substrates is compared using FEM analysis. By using FEM, coupling efficiency of the hybrid BAW/SAW with AlN/Mo/Si stack is 2.4%, whereas it is 3.2% for the SAW using AlN/Mo/GaN stack.