MAGNETIC RANDOM ACCESS MEMORY DEVICE USING NANO-MULTILAYER OF AlN/Co/AlN STRUCTURE

摘要

PURPOSE: A magnetic random access memory device using a nano-multilayer of an AlN/CO/AlN structure is provided to improve the tunneling magneto resistance by using a ALN as an insulator instead of the Al2O3 layer. CONSTITUTION: A magnetic random access memory device includes a three layered sandwich structure which is an AlN/Co/AlN thin film. Wherein the AlN layer as an insulator is about 1-3 nanometers and the Co layer as a ferromagnetic is about 0.1-2.0 nanometers. And the sandwich structure is laminated three times to twenty times.