Prediction of High-Power EMI Effects in CMOS Operational Amplifiers

摘要

In this paper, a new analytical model for the prediction of the effects of high-power electromagnetic interference in CMOS operational amplifiers is presented. This model provides a closed-form expression of the operational amplifiers (opamp) output offset voltage that is induced if radio frequency interference (RFI) is superimposed onto the opamp input voltages in terms of technology and design parameters. Such a model is very useful both to predict the susceptibility of a given opamp circuit and to design opamp topologies with a high immunity to RFI. Model predictions are compared with experimental results.