Immunity Analysis and Experimental Investigation of a Low-Noise Amplifier Using a Transient Voltage Suppressor Diode Under Direct Current Injection of HPM Pulses

摘要

This study evaluates the immunity of a low-noise amplifier (LNA) using a transient voltage suppressor (TVS) diode under direct current injection high-power microwave (HPM) pulses. The ac behavior of the TVS diode is examined. Both experiments and analysis demonstrate that the injected HPM power to failure of the LNA is increased by a factor of about 6 through the introduction of a TVS diode, the power to failure of the LNA is also related to the proportion of the direct current injected into the TVS diode and LNA. This analysis is useful for further discussion regarding semiconductor protection under HPM pulses.