Low-Noise Amplifier Protection Switch Using p-i-n Diodes With Tunable Open Stubs for Solid-State Pulsed Radar

摘要

In this letter, a tunable protection switch device using open stubs for $X$ -band low-noise amplifiers (LNAs) is proposed. The protection switch is implemented using p-i-n diodes. As the parasitic inductance in the p-i-n diodes may degrade the protection performance, tunable open stubs are attached to these diodes to obtain a grounding effect. The performance is optimized for the desired frequency band by adjusting the lengths of the microstrip line open stubs. The designed LNA protection switch is fabricated and measured, and sufficient isolation is obtained for a 200 MHz operating band. The proposed protection switch is suitable for solid-state power amplifier radars in which the LNAs need to be protected from relatively long pulses.