CRYSTALLOGRAPHY AND STRUCTURAL EVOLUTION OF CUBIC BORON NITRIDE FILMS DURING BIAS SPUTTER DEPOSITION

摘要

The mechanism and the crystallography of the growth of cubic boron nitride (c-BN) films deposited on <100>-oriented solicon substrates by radio-frequency bias sputtering have been studied by means of cross-sectional high-resolution transmission electron microscopy. particular attention has been paid to the atomic structure of graphitic (sp~2-bonded)BN and grain boundaries in the c-BN films. The c-BN films grow in the sequence of amorphous boron nitride (a-BN), turbostratic boron nitride (t-BN) and c-BN layers, similar to previous results.