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首页> 外文期刊>Acta Materialia >SELF-SIMILAR GROWTH OF A COMPOUND LAYER IN THIN-FILM BINARY DIFFUSION COUPLES
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SELF-SIMILAR GROWTH OF A COMPOUND LAYER IN THIN-FILM BINARY DIFFUSION COUPLES

机译:薄膜二元扩散夫妇中复合层的自相似生长

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摘要

The diffusion controlled growth of a compound phase A_nB between two thin films of material A and B is studied with the nonlinear Kirkendall effect included. This growth process is important in elec- tronic materials processing and in synthesis of high-temperature materials using multilayer films. Previous models of the growth rate do not solve the diffusion equation, and thus do not fully utilize the predictive capability. This paper describes a self similar transformation that reduces the nonlinear, time-dependent diffusion equation with two free boundaries into a nonlinear ordinary differential equation, which is solved numerically by a shooting method. It is found that the intrinsic diffusion coefficients of A and B in A_nB can be determined from the positions of the interfaces without using the concentration profile. This pro- vides a simpler method for measuring intrinsic diffusion coefficients. An asymptotic solution valid for small concentration gradients is derived and agrees with the numerical results.
机译:研究了复合相A_nB在材料A和B的两个薄膜之间的扩散控制生长,并考虑了非线性柯肯德尔效应。这种生长过程对于电子材料加工和使用多层膜的高温材料合成非常重要。以前的增长率模型无法求解扩散方程,因此无法充分利用预测能力。本文描述了一种自相似变换,该变换将具有两个自由边界的非线性,与时间相关的扩散方程简化为非线性常微分方程,可通过射击方法对其进行数值求解。发现可以通过界面的位置确定A_nB中A和B的本征扩散系数,而无需使用浓度分布。这为测量固有扩散系数提供了一种更简单的方法。推导了适用于小浓度梯度的渐近解,并与数值结果相符。

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