Performance of Organic Thin-Film Transistors Controlled by Electrode and Device Structures

摘要

We have fabricated organic thin-film transistors (OTFTs) of top contact (TC) structures using silver electrode based on triethylsilylethynyl anthradithiophene (TES-ADT) with mobility above 0.41 ${hbox{cm}}^{2}{hbox{s}}^{-1}{hbox{V}}^{-1}$ , current modulation higher than ${hbox{5}}times {hbox{10}}^{7}$ and sub-threshold swing below 0.65 V/dec.. The electrical characteristics of OTFTs are not only corresponding to the work function of source and drain electrodes materials but also to the surface tension and deposition energy of them. The effects of work function and surface tension dominate the electrical characteristics in bottom contact (BC) device. On the other hand, TC device is affected by deposition energy dominantly.