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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Energy distribution of secondary electrons from gold on teflon-FEP
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Energy distribution of secondary electrons from gold on teflon-FEP

机译:铁氟龙-FEP上金的二次电子的能量分布

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摘要

This paper presents results of the spectrum of energy of secondary electrons for the energies of perpendicularly incident electrons of 0.4 keV, 2.0 keV, or 3.5 keV in a gold surface deposited on a substratum of Teflon-FEP. Two samples of Teflon-FEP (50 nm) were used with deposition by sputtering gold layers with thicknesses of 2.5 nm and 50 nm. The results show that the energy distribution depends on the energy of irradiation for the sample with the 2.5 nm gold layer, while no significant difference was observed for the sample with the 50 nm layer.
机译:本文介绍了在聚四氟乙烯-FEP基底上沉积的金表面中垂直入射电子的能量为0.4 keV,2.0 keV或3.5 keV的二次电子能谱的结果。通过溅射厚度为2.5 nm和50 nm的金层,使用两个Teflon-FEP(50 nm)样品进行沉积。结果表明,能量分布取决于具有2.5 nm金层的样品的辐照能量,而对于具有50 nm金层的样品没有观察到显着差异。

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