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Te-Embedded Nanocrystalline PbTe Thick Films: Structure and Thermoelectric Properties Relationship

机译:Te-嵌入纳米晶体PBTE厚膜:结构和热电性质关系

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The Te-embedded PbTe nanocrystallline thick films (i.e., 50 μm) were electrodeposited, where the fraction and average grain size of PbTe and Te phases were tuned by adjusting the applied potential followed by post thermal treatment. The crystal grain boundary and Te nano-inclusion in the films played critical roles in their thermoelectric properties. The Te-embedded PbTe thick film with the average grain size of around 100 nm showed lower energy barrier height (EB = 0.023 eV) than thick films with the average grain size of a few tens of nm (EB = 0.11). Although decrease in the energy barrier reduced the Seebeck coefficient, however, it enhanced the electrical conductivity, which resulted in an increase in power factor (PF). The highest power factor was 183 μw K?2 cm?1, achieved at the energy barrier of 0.023 eV.
机译:电沉积Te-嵌入的PBTE纳米晶体厚膜(即50μm),其中通过调节施加的电位,然后进行热处理,调节PBTE和TE相的馏分和平均晶粒尺寸。 薄膜中的晶粒边界和TE纳米夹杂物在其热电性质中起着关键作用。 具有大约100nm的平均晶粒尺寸的Te-嵌入的PBTE厚膜显示出比具有厚的薄膜的能量阻挡高度(EB = 0.023eV),平均晶粒尺寸为几十个NM(EB = 0.11)。 尽管能量屏障的减小降低了塞贝克系数,但是它增强了电导率,这导致功率因数(PF)的增加。 最高功率因数是183μWK?2cm?1,在0.023eV的能量屏障下实现。

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