All-2D ReS2 transistors with split gates for logic circuitry

摘要

Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides (TMDs) and black phosphorus, are the most promising channel materials for future electronics because of their unique electrical properties. Even though a number of 2D-materials-based logic devices have been demonstrated to date, most of them are a combination of more than two unit devices. If logic devices can be realized in a single channel, it would be advantageous for higher integration and functionality. In this study we report high-performance van der Waals heterostructure (vdW) ReSsub2/sub transistors with graphene electrodes on atomically flat hBN, and demonstrate a NAND gate comprising a single ReSsub2/sub transistor with split gates. Highly sensitive electrostatic doping of ReSsub2/sub enables fabrication of gate-tunable NAND logic gates, which cannot be achieved in bulk semiconductor materials because of the absence of gate tunability. The vdW heterostructure NAND gate comprising a single transistor paves a novel way to realize "all-2D" circuitry for flexible and transparent electronic applications.