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Effect of the proton irradiation on the thermally activated flux flow in superconducting SmBCO coated conductors

机译:质子辐射对超导SMBCO导体中的热活化通量流动的影响

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We investigate changes in the vortex pinning mechanism caused by proton irradiation through the measurement of the in-plane electrical resistivity for H//c in a pristine and two proton-irradiated (total doses of 1?×?1015 and 1?×?1016?cm?2) SmBa2Cu3O7-δ (SmBCO) superconducting tapes. Even though proton irradiation has no effect on the critical temperature (Tc), the resulting artificial point defect causes an increase in normal state electrical resistivity. The electrical resistivity data around Tc shows no evidence of a phase transition to the vortex glass state but only broadens with increasing magnetic field due to the vortex depinning in the vortex liquid state. The vortex depinning is well interpreted by a thermally activated flux flow model in which the activation energy shows a nonlinear temperature change ({oldsymbol{U}}{oldsymbol{(}}{oldsymbol{T}},{oldsymbol{H}}{oldsymbol{)}}{oldsymbol{=}}{{oldsymbol{U}}}_{{oldsymbol{0}}}{oldsymbol{(}}{oldsymbol{H}}{oldsymbol{)}}{{oldsymbol{(}}{f{1}}-{oldsymbol{T}}{oldsymbol{/}}{{oldsymbol{T}}}_{{oldsymbol{c}}}{oldsymbol{)}}}^{{oldsymbol{q}}}) (q?=?2). The field dependence of activation energy shows a ({{oldsymbol{U}}}_{{f{0}}}{oldsymbol{ sim }}{{oldsymbol{H}}}^{-{oldsymbol{lpha }}}) with larger exponents above 4?T. This field dependence is mainly due to correlated disorders in pristine sample and artificially created point defects in irradiated samples. Compared with the vortex pinning due to correlated disorders, the vortex pinning due to the appropriate amount of point defects reduces the magnitude of Uo(H) in the low magnetic field region and slowly reduces Uo(H) in high magnetic fields.
机译:我们通过在原始和两个质子照射中测量HI // C的平面内电阻率来研究质子辐射引起的涡旋钉扎机制的变化(总剂量为1?×1015和1?×1016 ?CM?2)SMBA2CU3O7-δ(SMBCO)超导带。尽管质子辐射对临界温度(Tc)没有影响,所得到的人工缺陷导致正常状态电阻率的增加。 TC周围的电阻率数据显示没有对涡流玻璃状态的相位过渡的证据,而是由于涡流液态中的涡流脱落而仅随着磁场的增加而宽。涡旋脱落是由热活化的助熔剂流动模型解释,其中激活能量显示非线性温度变化({ boldsymbol {u}} { boldsymbol {(}} { boldsymbol {t}},{ boldsymbol {h}} { boldsymbol {)}} { boldsymbol {=} {{ boldsymbol {u}}} {{ boldsymbol {u}}} {{ boldsymbol {0}} { boldsymbol {(}} { boldsymbol {h} } { boldsymbol {)}}} {{ boldsymbol {(} { bf {1}} - { boldsymbol {t}} { boldsymbol {/}} { boldsymbol {}} _ {{{{ boldsymbol {c}}} { boldsymbol {)}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}}} ^ {{ boldsymbol {q}}}} )(q?=?2)。激活能量的字段依赖性显示了一个({ boldsymbol {u}}} {{ bf {0}}} { boldsymbol { sim}} {{ boldsymbol {h}} ^ { - { boldsymbol { alpha}}} )较大的指数以上4?t。该场依赖性主要是由于原始样品中相关疾病,并且在辐照样品中的人工产生的点缺陷。与由于相关障碍引起的涡流钉扎相比,由于适当量的点缺陷引起的涡流钉扎降低了低磁场区域中的UO(H)的大小,并在高磁场中缓慢减少UO(H)。

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