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首页> 外文期刊>Scientific reports. >Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) Substrates
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Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) Substrates

机译:在单晶MgO(001)衬底上生长的FERH中间底物诱导应变场

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摘要

Equi-atomic FeRh is highly unusual in that it undergoes a first order meta-magnetic phase transition from an antiferromagnet to a ferromagnet above room temperature (Tr?≈?370?K). This behavior opens new possibilities for creating multifunctional magnetic and spintronic devices which can utilise both thermal and applied field energy to change state and functionalise composites. A key requirement in realising multifunctional devices is the need to understand and control the properties of FeRh in the extreme thin film limit (tFeRh??10?nm) where interfaces are crucial. Here we determine the properties of FeRh films in the thickness range 2.5–10?nm grown directly on MgO substrates. Our magnetometry and structural measurements show that a perpendicular strain field exists in these thin films which results in an increase in the phase transition temperature as thickness is reduced. Modelling using a spin dynamics approach supports the experimental observations demonstrating the critical role of the atomic layers close to the MgO interface.
机译:Equi-Atomic Ferh高度不寻常,因为它经历了从反霉素到室温的铁磁性(Tr x 370 k)的铁麦芽棒的第一阶元磁相转变。该行为打开了用于创建多功能磁性和旋转式设备的新可能性,该装置可以利用热量和施加的现场能量来改变状态和功能性复合材料。实现多功能设备的关键要求是需要了解和控制界面是关键的极端薄膜限制(第三→<Δ10≤nm)的Ferh的属性。在这里,我们确定在MgO基板上直接生长的厚度范围2.5-10的FERH薄膜的性质。我们的磁体和结构测量表明,在这些薄膜中存在垂直应变场,这导致相变温度的增加,因为厚度降低。使用自旋动力学方法建模支持实验观察,证明原子层靠近MgO接口的关键作用。

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