When Pd is thermally evaporated onto n -layer MoS _(2) , a uniform film is formed on the surface. If Pd/ n -layer MoS _(2) is annealed at high temperature under vacuum, thinning of n -layer MoS _(2) is observed. By controlling the thickness of the Pd film and annealing temperature, one or two top layers of n -layer MoS _(2) can be removed during the annealing process. The thinning method presented in this work benefits the future design and fabrication of MoS _(2) -based devices.
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机译：当Pd热蒸发到N-Layer MOS _（2）上时，在表面上形成均匀的膜。如果在真空下在高温下退火PD / N -Layer MOS _（2），则观察到N -Layer MOS _（2）的变薄。通过控制Pd膜和退火温度的厚度，可以在退火过程中除去一个或两个顶层的N-层MO_（2）。本工作中提出的稀释方法有利于未来的设计和制造MOS _（2）的设备。
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