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首页> 外文期刊>RSC Advances >Direct chemical vapor deposition of graphene on plasma-etched quartz glass combined with Pt nanoparticles as an independent transparent electrode for non-enzymatic sensing of hydrogen peroxide
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Direct chemical vapor deposition of graphene on plasma-etched quartz glass combined with Pt nanoparticles as an independent transparent electrode for non-enzymatic sensing of hydrogen peroxide

机译:石墨烯对等离子体蚀刻石英玻璃的直接化学气相沉积与Pt纳米颗粒为独立的透明电极,用于过氧化氢的非酶促传感

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摘要

In this work, chemical vapor deposition (CVD) method-grown graphene on plasma-etched quartz glass supported platinum nanoparticles (PtNPs/eQG) was constructed as an independent transparent electrode for non-enzymatic hydrogen peroxide (H _(2) O _(2) ) detection. Graphene grown on quartz glass by the CVD method can effectively reduce the wrinkles and pollution caused by traditional transfer methods. The addition of the CF _(4) plasma-etched process accelerates the growth rate of graphene on quartz glass. The platinum nanoparticles (PtNPs) prepared by in situ sputtering have favorable dispersibility and maximize exposed active catalytic sites on graphene, providing performance advantages in the application of H _(2) O _(2) detection. The resulting sensor's detection limit (3.3 nM, S/N = 3), detection linear range (10 nM to 80 μM) and response time (less than 2 s) were significantly superior to other graphene supported PtNPs materials in sensing of H _(2) O _(2) . In addition, the material preparation method was related to the non-transfer CVD method and in situ sputtering technology, allowing for the creation of independent electrodes without additional electrode modification processes. This primitive material preparation and electrode assembly process were promoted for the application and development of practical H _(2) O _(2) sensors.
机译:在这项工作中,将化学气相沉积(CVD)在等离子体蚀刻的石英玻璃支撑的铂纳米颗粒(PTNPS / EQG)上的生长石墨烯(PTNPS / EQG)被构建为非酶氢过氧化氢的独立透明电极(H _(2)O _( 2))检测。通过CVD方法在石英玻璃上生长的石墨烯可以有效地减少传统转移方法引起的皱纹和污染。添加CF _(4)等离子体蚀刻方法加速石英玻璃的石墨烯生长速率。通过原位溅射制备的铂纳米颗粒(PTNP)具有良好的分散性,并在石墨烯上最大化暴露的活性催化位点,在施加H _(2)O _(2)检测中提供性能优势。得到的传感器的检测极限(3.3nm,s / n = 3),检测线性范围(10nm至80μm)和响应时间(小于2s)明显优于其他石墨烯支持的ptnps材料,以检测H _( 2)o _(2)。此外,材料制备方法与非转移CVD方法和原位溅射技术有关,允许在没有附加电极改性过程的情况下产生独立电极。促进了该原始材料制备和电极组装过程,用于应用和开发实用的H _(2)O _(2)传感器。

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