Interface engineering for gain perovskite photodetectors with extremely high external quantum efficiency

摘要

Efficient CH _(3) NH _(3) PbI _(3) photodetectors (PDs) with an extremely high gain of the maximum external quantum efficiency (EQE) of 140?000% within the ultraviolet region to the near infrared region (NIR) and an extremely high responsivity ( R ) under a low bias of ?5 V were successfully fabricated. The fabricated devices manifested outstanding environmental stability with only 10% degradation of EQE after being exposed to air for 24 h. These obtained results indicate the promising potential of perovskite PDs for visible light communication applications.