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首页> 外文期刊>Science and technology of advanced materials >Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs
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Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs

机译:四面体无定形碳制备过滤器阴极真空电弧用于钙钛矿太阳能电池和量子点LED中的空穴传输层

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摘要

(ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dot light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing, reasonable electrical conductivity, optical transmittance, and a high work function. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (spsup3/sup/spsup2/sup hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance of 10.33 Ωsup-2/sup, a resistivity of 1.34 × 10sup-4/sup Ω cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, the performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than the performance of QDLEDs with different ta-C thicknesses. It is concluded that ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.? 2019 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis Group.
机译:(TA-C)涂覆通过过滤的阴极真空弧(FCVA)工艺作为钙钛矿太阳能电池(PSC)和量子点发光二极管(Qdleds)的空穴传输层(HTL)的薄膜。 P型Ta-C膜具有多种显着的特征,包括易于制造,而无需热退火,合理的导电性,光学透射率和高功函数。 X射线光电子体光谱和紫外线光电子体光谱检查表明,电气性质(SP 3 / SP 2 杂交键)和TA-C HTL的工作功能适用于pscs和qdleds。另外,为了将装置的性能相关联,详细研究了沉积在ITO阳极上的不同厚度(5〜20nm)的FCVA生长的TA-C膜的光学,表面形态和结构性质。沉积在ITO阳极上的厚度为5nm的优化的TA-C膜的薄层电阻为10.33Ω -2 ,电阻率为1.34×10 -4 ω CM,光透射率为88.97%。与具有P-NiO HTL的参考PSC相比,由于其改进的填充因子,PSC具有5nm厚的TA-C HTL的PSC,产生更高的功率转换效率(PCE,10.53%)。此外,具有5nm厚的TA-C空穴注入层(HIL)的Qdleds的性能比具有不同TA-C厚度的Qdleds的性能更好。得出结论是,TA-C薄膜有可能用作下一代PSC和Qdleds的HTL和HIL。 2019年作者。由国家材料科学研究所与Taylor&Francis集团合作发布。

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