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Response of electromagnetic and Thomson effect of semiconductor medium due to laser pulses and thermal memories during photothermal excitation

机译:半导体介质引起的激光脉冲和热存储器的电磁和汤氏效应响应在光热励磁期间

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In this article, the novel mathematical model under the effect of Thomson heating of a semi-infinite semiconductor elastic medium is expressed. The thermoelasticity theory is applied in the presence of magnetic field when the medium illuminated by a laser pulse in context of photothermal excitation. The discussions are focused on studying the overlapping between plasma, thermal, electro-magnetic and elastic waves when they propagated in the medium. The two dimensional (2D) deformations is used in the governing equations when the medium is homogenous and isotropic. The charge density of induced electric current is expressed for a time functionally only. The physical fields are obtained when use the normal mode technique with some thermal, mechanical and plasma loads occur at the free surface of elastic semi-infinite semiconductor medium. The numerical calculations of physical field's distributions are discussed and shown graphically under the effect of Thomson parameter.
机译:在本文中,表达了在半无限半导体弹性介质的汤森加热的影响下的新颖数学模型。当通过激光脉冲在光热激发的背景下通过激光脉冲照射的介质在磁场存在下,热弹性理论应用。讨论的重点是在介质中繁殖时研究等离子体,热,电磁和弹性波之间的重叠。当培养基是均匀和各向同性时,在控制方程中使用二维(2D)变形。感应电流的电荷密度仅在功能上表达。当使用具有一些热的正模式技术时,获得物理领域在弹性半约半导体介质的自由表面处发生一些热量,机械和等离子体负载。在Thomson参数的效果下讨论和图形地讨论了物理字段分布的数值计算。

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