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Response of Thermo- Electro-Magneto Semiconductor Elastic Medium to Photothermal Excitation Process with Thomson Influence

机译:热电磁化半导体弹性介质与汤姆森影响的光热激励过程的响应

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摘要

The effect of Thomson heating of semiconductor medium is studied. Analytical discussions are made in the presence of thermoelectricity theory and magnetic field in context of Photothermal transport process. The interactions between plasma, thermoelectric, electromagnetic and elastic waves are taken into consideration. The governing equations are investigated in two dimensional deformations of homogenous, isotropic medium. The density of charge is taken as a function of time only of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied on the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effect of thermoelectric parameter and Thomson parameter.
机译:研究了半导体介质的汤姆森加热的影响。 在光热运输过程中,在热电理论和磁场存在下进行分析讨论。 考虑了等离子体,热电,电磁和弹性波之间的相互作用。 在均匀的各向同性培养基的二维变形中研究了控制方程。 作为仅诱导电流的时间函数,将充电密度作为时间的函数。 正常模式技术用于获得正在调查的物理量场。 通过重组过程的一些电力负载和热效果施加在半导体弹性介质的自由表面上。 本现象中的物理领域的分布被讨论并以图形方式表示。 在热电参数和汤姆森参数的影响下已经讨论了结果。

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