...
首页> 外文期刊>Frontiers in Chemistry >Simple Synthesis of CuInS2/ZnS Core/Shell Quantum Dots for White Light-Emitting Diodes
【24h】

Simple Synthesis of CuInS2/ZnS Core/Shell Quantum Dots for White Light-Emitting Diodes

机译:用于白色发光二极管的CUINS2 / ZnS核/壳量子点的简单合成

获取原文
           

摘要

In this study, the CuInS2/ZnS core/shell quantum dots (QDs) were prepared via simple and environmentally friendly solvothermal synthesis and were used as phosphors for white lightemitting diodes (WLEDs). The surface defect of the CuInS2 core QDs were passivated by the ZnS shell by forming CuInS2/ZnS core/shell QDs. By adjusting the Cu/In ratio and the nucleation temperature, the photoluminescence (PL) peak of the CuInS2 QDs was tunable in a range of 651-775 nm. After coating the ZnS layer and modifying oleic acid ligands, the PL quantum yield increased to 85.06%. The CuInS2/ZnS QDs powder thermal stability results showed that the PL intensity of the QDs remained 91% at 100 °C for 10 mins. With high color rendering index values (CRI, 90) and correlated color temperature of 4360 K for the efficient WLEDs were fabricated using CuInS2/ZnS QDs and (Ba,Sr) 2 SiO4 :Eu2+ as colour converters in combination with blue GaN light-emitting diodes chip.
机译:在该研究中,通过简单和环保的溶剂热合成制备CuinS2 / ZnS核/壳量子点(QDS),用作白色发光二极管(WLED)的磷光体。通过形成Cuins2 / ZnS芯/壳QD,通过ZnS壳钝化CuinS2芯QD的表面缺陷。通过调节Cu / in比和成核温度,Cuins2QD的光致发光(PL)峰在651-775nm的范围内。在涂覆ZnS层并改性油酸配体后,PL量子产率增加到85.06%。 CUINS2 / ZnS QDS粉末热稳定性稳定性结果表明,QD的PL强度在100℃下保持91%10分钟。具有高色彩渲染指标值(CRI,90)和4360 k的相关色温,使用Cuins2 / ZnS QDS和(Ba,SR)2 SiO4:Eu2 +作为彩色转换器,与蓝GaN发光相结合二极管芯片。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号