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Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes

机译:一锅法合成不同Cu / In比的CuInS 2 -ZnS量子点及其在白色发光二极管中的应用

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This paper reports one-pot method toward the synthesis of CuInS/ZnS hybrid nanoparticles. First, CuInS quantum dots (QDs) were synthesized in the noncoordinating solvent octadecene using copper chlorine, indium chlorine and dodecanethiol. Copper indium sulfide (CIS) quantum dots (QDs) for different Cu/In molar ratios of 1/1, 1/2, and 1/4 are synthesized. The band gap energy of CIS QDs is observed to be dependent for Cu/In ratio, exhibiting a higher band gap from more Cu-deficient QDs. The emission wavelengths of all CIS QDs belong to a deep red region (710-780 nm) with relatively low quantum yields (QYs) of 3.4-7.8%. Compared to respective original core QDs, the absorption peaks of CIS/ZnS QDs are blue-shifted, and their emission wavelengths move to a higher energy accordingly, showing a quite tunable emission from yellow to red. The effective surface passivation by a ZnS overlayer results in a dramatic increase in QY of CIS/ZnS QDs in the range of 38-48%. Finally, high luminescent CIS/ZnS QDs with high luminescent PL efficiency are used for white light emitting diode.
机译:本文报道了一锅法合成CuInS / ZnS杂化纳米粒子的方法。首先,使用氯铜,铟氯和十二烷硫醇在非配位溶剂十八碳烯中合成CuInS量子点(QD)。合成了铜/铟摩尔比为1 / 1、1 / 2和1/4的硫化铜铟(CIS)量子点(QD)。观察到CIS QD的带隙能量取决于Cu / In比,从更多的Cu缺乏的QD中显示出更高的带隙。所有CIS QD的发射波长都属于深红色区域(710-780 nm),其量子产率(QY)相对较低,为3.4-7.8%。与各自的原始核心量子点相比,CIS / ZnS量子点的吸收峰发生了蓝移,并且它们的发射波长相应地移动到更高的能量,从而显示出从黄色到红色的可调发射。 ZnS覆盖层的有效表面钝化导致CIS / ZnS QD的QY显着增加,范围在38-48%之间。最后,具有高发光PL效率的高发光CIS / ZnS QD被用于白色发光二极管。

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