Performance Analysis of Electrical Characteristics of Single Gate and Double Gate Nano-MOSFET Devices

摘要

Metal oxide semiconductor field effect transistor (MOSFET) is a semiconductor device used in many electronic devices for amplification and switching electrical signals. In modern era, low power portable devices require more transistors to be integrated on a single chip to perform immeasurable number of functions with high speed, low power consumption and less propagation delay since the number of circuits in a chip keeps increasing daily. MOSFET downscaling has been the driving force towards the technological advancement, but continuous scaling down of MOSFET causes problem of high power dissipation, high leakage current, Short Channel Effects (SCEs), excessive process variation and reliability issues. In this work, performance analysis of electrical characteristics of single gate and double gate nano-MOSFET devices are investigated using FETTOY simulating software at room temperature (RT) by varying the oxide thickness from 0.3nm to 1.2nm to determine the drain current, quantum capacitance, transconductance, quantum capacitance/insulator capacitance and mobile electron. We can conclude that in deep nanometer regime, double gate MOSFET device have advantages over single gate due to high conductivity to reduce leakage current and short channel effects (SCEs).