The current-induced electroresistance in strain-modulated Pr0.5Sr0.5MnO3 film

摘要

Prsub0.5/subSrsub0.5/subMnOsub3/sub films were grown on ferroelectric substrates of 0.67Pb(Mgsub1/3/subNbsub2/3/sub)Osub3/sub-0.33PbTiOsub3/sub by pulsed-laser deposition method. The film structure and lattice change with electric field applied on the substrate are examined by X-ray diffraction. The electric field dependence of resistivity was compared with electric field dependence of lattice at room temperature, revealing a relation between resistance and strain. Current-induced electroresistance (CER) was studied by using different measuring current. With increasing electric filed a colossal decrease of CER at low temperature was achieved, indicating great strain effect. The piezoelectric strain effect on the magnetoelectric coupling at multiferroic interface was discussed.