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Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films

机译:表面状态杂化对薄拓扑绝缘膜中电流感应自旋轨道转矩的影响

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摘要

We investigate the thickness optimization for maximum current-induced spin-orbit torque (SOT) generated by topological surface states (TSS’s) in a bilayer system comprising of a ferromagnetic layer coupled to a thin topological insulator (TI) film. We show that by reducing the TI thickness, two competing effects on the SOT are induced: (i) the torque strength is stronger as the bulk contribution is decreased; (ii) on the other hand, the torque strength becomes suppressed due to increasing hybridization of the surface states. The latter is attributed to the opposite helicities of the coupled TSS’s. We theoretically model the interplay of these two effects and derive the optimal TI thickness to maximize the spin torque, which is estimated to be about 3–5 nm for typical Bi2Se3 films.
机译:我们研究了在双层系统中由拓扑表面状态(TSS)产生的最大电流感应自旋轨道转矩(SOT)的厚度优化,该双层系统包括耦合到薄拓扑绝缘体(TI)膜的铁磁层。我们表明,通过减小TI厚度,可以在SOT上引起两个相互竞争的影响:(i)随着体积贡献的减小,扭矩强度变得更强;另一方面,(ii)由于增加了表面状态的杂化而使扭矩强度受到抑制。后者归因于耦合的TSS的相反螺旋。从理论上讲,我们对这两种效应的相互作用进行建模,并得出最佳的TI厚度,以使自旋扭矩最大化,对于典型的Bi2Se3薄膜,其估计约为3-5 nm。

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