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首页> 外文期刊>Scientific reports. >Distinct modulation of inactivation by a residue in the pore domain of voltage-gated Na + channels: mechanistic insights from recent crystal structures
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Distinct modulation of inactivation by a residue in the pore domain of voltage-gated Na + channels: mechanistic insights from recent crystal structures

机译:电压门控Na +通道孔结构域中残留物的灭活的明显调节:最近的晶体结构的机械洞察

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Inactivation of voltage-gated Na+ channels (VGSC) is essential for the regulation of cellular excitability. The molecular rearrangement underlying inactivation is thought to involve the intracellular linker between domains III and IV serving as inactivation lid, the receptor for the lid (domain III S4-S5 linker) and the pore-lining S6 segements. To better understand the role of the domain IV S6 segment in inactivation we performed a cysteine scanning mutagenesis of this region in rNav 1.4 channels and screened the constructs for perturbations in the voltage-dependence of steady state inactivation. This screen was performed in the background of wild-type channels and in channels carrying the mutation K1237E, which profoundly alters both permeation and gating-properties. Of all tested constructs the mutation I1581C was unique in that the mutation-induced gating changes were strongly influenced by the mutational background. This suggests that I1581 is involved in specific short-range interactions during inactivation. In recently published crystal structures VGSCs the respective amino acids homologous to I1581 appear to control a bend of the S6 segment which is critical to the gating process. Furthermore, I1581 may be involved in the transmission of the movement of the DIII voltage-sensor to the domain IV S6 segment.
机译:电压门控Na +通道(Vgsc)的失活对于细胞兴奋性的调节至关重要。据认为,潜在的灭活下的分子重排涉及用作灭活盖的结构域III和IV之间的细胞内接头,盖子的受体(结构域III S4-S5接头)和孔隙衬里S6段。为了更好地理解域IV S6段在失活的作用,我们在RNAV 1.4通道中进行了该区域的半胱氨酸扫描诱变,并在稳态灭活的电压依赖性中筛选用于扰动的构建体。该屏幕在野生型通道的背景下进行,并且在承载突变K1237e的通道中进行,这深刻地改变了渗透和门控性能。在所有测试的构建体中,突变I1581c是独一无二的,因为突变诱导的门控变化受到突变背景的强烈影响。这表明I1581涉及失活期间的特定短程相互作用。在最近公开的晶体结构VGSC中,对I1581同源的各个氨基酸似乎控制了对门控过程至关重要的S6段的弯曲。此外,I1581可以参与DIII电压传感器的移动的传输到域IV S6段。

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