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首页> 外文期刊>Scientific reports. >Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3
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Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3

机译:原子分辨率界面的无铅铁电K0.5na0.5n0.5薄膜沉积在srtio3上

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Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K0.5Na0.5)NbO3 (KNN) thin films and single-crystalline SrTiO3 substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.
机译:氧化物接口工程以来引起了相当大的关注,因为界面晶格应变,位错和组成变化诱导的异国特性。本文通过扫描透射电子显微镜(茎)研究了无铅压电(K0.5NA0.5)NBO3(KNN)薄膜和单晶SRTIO3基板之间的原子分辨率和组成。结合电子能量损失光谱(EEL)。观察到尖锐的外延界面是由具有3/1的比率的Nb和Ti阳离子组成的单层。第一原理计算指示界面单层显示不同的电子结构,并在界面附近的KNN薄膜的不对称电荷分布中起到重要作用。我们还观察了KNN / STO接口附近相对大的晶格菌株的逐渐放松过程,这阐述了通过应变工程的KNN薄膜的良好结构调制行为。

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